FGH30N60LSD igbt equivalent, pt igbt.
* Low Saturation Voltage: VCE(sat) =1.1 V @ IC = 30 A
* High Input Impedance
* Low Conduction Loss
* This Device is Pb−Free and is RoHS Compliant
Applicat.
where low conduction losses are the most important factor.
Features
* Low Saturation Voltage: VCE(sat) =1.1 V @ IC =.
Using ON Semiconductor ’s advanced PT technology,
the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses .
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